PART |
Description |
Maker |
CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100 CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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AS7C33512NTD32_36A AS7C33512NTD32-36A.V2.8 AS7C335 |
3.3V 512K x 32/36 Pipelined SRAM with NTD 3.3流水线为512k × 32/36与新台币的SRAM 3.3V 512K x 32/36 Pipelined SRAM with NTD 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 3.3V 512K x 32/36 Pipelined SRAM with NTD 512K X 32 ZBT SRAM, 3.8 ns, PQFP100 From old datasheet system NTD? Sync SRAM - 3.3V
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor Corp...
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A67P9318E-4.2F A67P8336 A67P8336E A67P8336E-2.6 A6 |
DIODE ZENER SINGLE 500mW 5.6Vz 20mA-Izt 0.05 5uA-Ir 3Vr DO35-GLASS 5K/AMMO 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 1856 × 36 LVTTL,流水线ZeBL的SRAM GIGABASE 350 CAT5E PATCH 5 FT, SNAGLESS, WHITE 12k × 1856 × 36 LVTTL,流水线ZeBL的SRAM 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 512k × 1856 × 36 LVTTL,流水线ZeBL的SRAM 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 18256 × 36 LVTTL,流水线ZeBL的SRAM
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AMICC[AMIC Technology] AMIC Technology Corporation AMIC Technology, Corp.
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CY7C1386DV25-250BZXI CY7C1386DV25-250BZI CY7C1386D |
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 18兆位(为512k × 36/1M × 18)流水线双氰胺同步静态存储器 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3.4 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA119
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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TC55V16366FF-133 |
512K Word x 36 Bit Synchronous Pipelined Burst Static RAM(512K 字x 36位同步管道脉冲静RAM)
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Toshiba Corporation
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CY7C1370CV CY7C1372CV25-250BZI CY7C1370CV25 CY7C13 |
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture 512K x 36/1M x 18 Pipelined SRAM with NoBL(TM) Architecture 512K x 36/1M x 18 Pipelined SRAM with NoBL⑩ Architecture
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CYPRESS[Cypress Semiconductor]
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IDT71V67603S166BGGI IDT71V67803S133PFG IDT71V67803 |
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM 3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.8 ns, PQFP100 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.8 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 3.5 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 4.2 ns, PQFP100
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IDT INTEGRATED DEVICE TECHNOLOGY INC DB Lectro, Inc. Integrated Device Technology, Inc.
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CY7C1354BV25-166 CY7C1356BV25-225 CY7C1354BV25 CY7 |
256K x 36/512K x 18 Pipelined SRAM with NoBL(TM) Architecture 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256K x 36/512K x 18 Pipelined SRAM with NoBL⑩ Architecture
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CYPRESS[Cypress Semiconductor]
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IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
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IDT http:// Integrated Device Technology, Inc.
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IS61VPD102418A-250TQ IS61VPD102418A-250TQI IS61VPD |
512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA165
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Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
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